Bandwidth Splitter Tmg 2010 54
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It is shown that the natural ultraviolet light absorbing properties of the liquid crystal constituent during the photoinduced elaboration of a liquid crystalline gel induce the broadening of the reflection bandwidth. The polymer component is then included in a resin by preserving its spatial distribution, and transmission electron microscopy investigations of cross sections show the existence of a structure gradient, which is at the origin of the broadening phenomenon. Such reflectors may be of interest for reflective polarizer-free displays or smart windows for the control of solar light for which a broadband reflection is required.
Layered zinc hydroxide nitrate (ZHN) was synthesized and nitrate ions were topotactically exchanged with three different anionic species of commercial organic ultraviolet (UV) ray absorbers: 2-mercaptobenzoic acid, 2-aminobenzoic acid, and 4-aminobenzoic acid. The exchange reactions were confirmed by X-ray powder diffraction (XRPD), Fourier transform infrared spectroscopy (FTIR), ultraviolet visible (UV-Vis) spectroscopy, and thermal analysis (thermogravimetry, TGA, and differential thermal analysis, DTA). In all the anionic exchanged products, evidence of grafting of the organic species onto the inorganic matrix was obtained. In general, after intercalation/grafting, the UV absorption ability was improved in relation to the use of the parent organic material, showing that layered hydroxide salts (LHS) can be good alternative matrixes for the immobilization of organic species with UV-blocking properties in cosmetic products. Copyright 2010 Elsevier Inc. All rights reserved.
Broadband light perfect absorbers (BPAs) are desirable for applications in numerous optoelectronics devices. In this work, a semiconductor-based broadband light perfect absorber (S-BPA) has been numerically demonstrated by utilizing plasmonlike resonances of high-index semiconductor resonators. A maximal absorption of 99.7% is observed in the near-infrared region. By taking the absorption above 80% into account, the spectral bandwidth reaches 340 nm. The absorption properties mainly originate from the optical cavity modes induced by the cylinder resonators and ultrathin semiconductor film. These optical properties and simple structural features can maintain the absorber platform with wide applications in semiconductor optoelectronics.
Recently, techniques involving random patterns have made it possible to control the light trapping of microstructures over broad spectral and angular ranges, which provides a powerful approach for photon management in energy efficiency technologies. Here, we demonstrate a simple method to create a wideband near-unity light absorber by introducing a dense and random pattern of metal-capped monodispersed dielectric microspheres onto an opaque metal film; the absorber works due to the excitation of multiple optical and plasmonic resonant modes. To further expand the absorption bandwidth, two different-sized metal-capped dielectric microspheres were integrated into a densely packed monolayer on a metal back-reflector. This proposed ultra-broadband plasmonic-photonic super absorber demonstrates desirable optical trapping in dielectric region and slight dispersion over a large incident angle range. Without any effort to strictly control the spatial arrangement of the resonant elements, our absorber, which is based on a simple self-assembly process, has the critical merits of high reproducibility and scalability and represents a viable strategy for efficient energy technologies. PMID:28256599
III-Nitride based deep ultraviolet (DUV) light emitting diodes (LEDs) rapidly penetrate into sensing market owing to several advantages over traditional UV sources (i.e. mercury, xenon and deuterium lamps). Small size, a wide choice of peak emission wavelengths, lower power consumption and reduced cost offer flexibility to system integrators. Short emission wavelength offer advantages for gas detection and optical sensing systems based on UV induced fluorescence. Large modulation bandwidth for these devices makes them attractive for frequency-domain spectroscopy. We will review present status of DUV LED technology and discuss recent advances in short wavelength emitters and high power LED lamps.
With the advent of high volume manufacturing capabilities by extreme ultraviolet lithography, constant improvements in light source design and cost-efficiency are required. Currently, light intensity and conversion efficiency (CE) measurments are obtained by charged couple devices, faraday cups etc, but also phoshpor imaging plates (IPs) (BaFBr:Eu). IPs are sensitive to light and high-energy species, which is ideal for studying extreme ultraviolet (EUV) light from laser produced plasmas (LPPs). In this work, we used IPs to observe a large angular distribution (10°-90°). We ablated a tin target by high-energy lasers (1064 nm Nd:YAG, 1010 and 1011 W/cm2) to generate the EUV light. The europium ions in the IP were trapped in a higher energy state from exposure to EUV light and high-energy species. The light intensity was angular dependent; therefore excitation of the IP depends on the angle, and so highly informative about the LPP. We obtained high-space resolution (345 μm, 0.2°) angular distribution and grazing spectrometer (5-20 nm grate) data simultaneously at different target to IP distances (103 mm and 200 mm). Two laser systems and IP types (BAS-TR and BAS-SR) were also compared. The cosine fitting values from the IP data were used to calculate the CE to be 1.6% (SD ± 0.2) at 13.5 nm 2% bandwidth. Finally, a practical assessment of IPs and a damage issue are disclosed.
... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Ultraviolet detector. 872.6350 Section 872.6350...) MEDICAL DEVICES DENTAL DEVICES Miscellaneous Devices § 872.6350 Ultraviolet detector. (a) Identification. An ultraviolet detector is a device intended to provide a source of ultraviolet light which is used...
An oxygen concentration measurement system for blood hemoglobin comprises a multiple-wavelength low-coherence optical light source that is coupled by single mode fibers through a splitter and combiner and focused on both a target tissue sample and a reference mirror. Reflections from both the reference mirror and from the depths of the target tissue sample are carried back and mixed to produce interference fringes in the splitter and combiner. The reference mirror is set such that the distance traversed in the reference path is the same as the distance traversed into and back from the target tissue sample at some depth in the sample that will provide light attenuation information that is dependent on the oxygen in blood hemoglobin in the target tissue sample. Two wavelengths of light are used to obtain concentrations. The method can be used to measure total hemoglobin concentration [Hb.sub.deoxy +Hb.sub.oxy ] or total blood volume in tissue and in conjunction with oxygen saturation measurements from pulse oximetry can be used to absolutely quantify oxyhemoglobin [HbO.sub.2 ] in tissue. The apparatus and method provide a general means for absolute quantitation of an absorber dispersed in a highly scattering medium.
Data communication based on white light generated using a near-ultraviolet (NUV) laser diode (LD) pumping red-, green-, and blue-emitting (RGB) phosphors was demonstrated for the first time. A III-nitride laser diode (LD) on a semipolar (2021¯) substrate emitting at 410 nm was used for the transmitter. The measured modulation bandwidth of the LD was 1 GHz, which was limited by the avalanche photodetector. The emission from the NUV LD and the RGB phosphor combination measured a color rendering index (CRI) of 79 and correlated color temperature (CCT) of 4050 K, indicating promise of this approach for creating high quality white lighting. Using this configuration, data was successfully transmitted at a rate of more than 1 Gbps. This NUV laser-based system is expected to have lower background noise from sunlight at the LD emission wavelength than a system that uses a blue LD due to the rapid fall off in intensity of the solar spectrum in the NUV spectral region.
According to the ITRS roadmap, mask defects are among the top technical challenges to introduce extreme ultraviolet (EUV) lithography into production. Making a multilayer defect-free extreme ultraviolet (EUV) blank is not possible today, and is unlikely to happen in the next few years. This means that EUV must work with multilayer defects present on the mask. The method proposed by Luminescent is to compensate effects of multilayer defects on images by modifying the absorber patterns. The effect of a multilayer defect is to distort the images of adjacent absorber patterns. Although the defect cannot be repaired, the images may be restored to their desired targets by changing the absorber patterns. This method was first introduced in our paper at BACUS 2010, which described a simple pixel-based compensation algorithm using a fast multilayer model. The fast model made it possible to complete the compensation calculations in seconds, instead of days or weeks required for rigorous Finite Domain Time Difference (FDTD) simulations. Our SPIE 2011 paper introduced an advanced compensation algorithm using the Level Set Method for 2D absorber patterns. In this paper the method is extended to consider process window, and allow repair tool constraints, such as permitting etching but not deposition. The multilayer defect growth model is also enhanced so that the multilayer defect can be "inverted", or recovered from the top layer profile using a calibrated model.
A time-resolved photoluminescence-based system providing quality control during manufacture of thin film absorber layers for photovoltaic devices. The system includes a laser generating excitation beams and an optical fiber with an end used both for directing each excitation beam onto a thin film absorber layer and for collecting photoluminescence from the absorber layer. The system includes a processor determining a quality control parameter such as minority carrier lifetime of the thin film absorber layer based on the collected photoluminescence. In some implementations, the laser is a low power, pulsed diode laser having photon energy at least great enough to excite electron hole pairs in the thin film absorber layer. The scattered light may be filterable from the collected photoluminescence, and the system may include a dichroic beam splitter and a filter that transmit the photoluminescence and remove scattered laser light prior to delivery to a photodetector and a digital oscilloscope. 2b1af7f3a8